In the given figure, a diode D is connected to an external resistance R = 100 $$\Omega $$ and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the citcuit will be
A
20 mA
B
35 mA
C
30 mA
D
40 mA
2
AIPMT 2015 Cancelled Paper
MCQ (Single Correct Answer)
+4
-1
Which logic gate is represented by the following combination of logic gates ?
A
AND
B
NOR
C
OR
D
NAND
3
AIPMT 2015 Cancelled Paper
MCQ (Single Correct Answer)
+4
-1
If in a p-n junction, a square input signal of 10 V is applied, as shown,
then the output across RL will be
A
B
C
D
4
AIPMT 2014
MCQ (Single Correct Answer)
+4
-1
The given graph represents V-I characteristic for a semiconductor device.
Which of the following statement is correct ?
A
It is V-I characteristic for solar cell where, point A represents open circuit voltage and point B short circuit current.
B
It is for a solar cell and popints A and B represent open circuit voltage and current, respectively.
C
It is for a photodiode and points A and B represent open circuit voltage and current, respectively.
D
It is for a LED and points A and B represent open circuit voltage and short circuit current, respectively.
