For transistor action
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vety thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse biased.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Which one of the following pairs of statements is correct?
A
(4) and (1)
B
(1) and (2)
C
(2) and (3)
D
(3) and (4)
2
AIPMT 2010 Prelims
MCQ (Single Correct Answer)
+4
-1
To get an output Y = 1 in given circuit which of the following input will be correct ?
A
A $$ \to $$ 1, B $$ \to $$ 0, C $$ \to $$ 0
B
A $$ \to $$ 1, B $$ \to $$ 0, C $$ \to $$ 1
C
A $$ \to $$ 1, B $$ \to $$ 1, C $$ \to $$ 0
D
A $$ \to $$ 0, B $$ \to $$ 1, C $$ \to $$ 0
3
AIPMT 2010 Prelims
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
A common emitter amplifier has a voltage gain of 50, an input impedance of 100 $$\Omega $$ and an output impedance of 200 $$\Omega $$. The power gain of the amplifier is
A
500
B
1000
C
1250
D
50
4
AIPMT 2010 Prelims
MCQ (Single Correct Answer)
+4
-1
Which one of the following statement is false ?
A
Pure Si doped with trivalent impurities gives a p-type semiconductor.
B
Majority carries in a n-type semiconductor are holes.
C
Minority carries in a p-type semiconductor are electrons.
D
The resistance of intrinisic semiconductor decreases with increase of temperature.
