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1

### AIPMT 2010 Mains

For transistor action
(1)  Base, emitter and collector regions should have similar size and doping concentrations.
(2)  The base region must be vety thin and lightly doped.
(3)  The emitter-base junction is forward biased and base-collector junction is reverse biased.
(4)  Both the emitter-base junction as well as the base-collector junction are forward biased.

Which one of the following pairs of statements is correct?
A
(4) and (1)
B
(1) and (2)
C
(2) and (3)
D
(3) and (4)

## Explanation

For transistor action, the base region must be very thin and lightly doped. Also, the emitter-base junction is forward biased and base-collector junction is reverse biased.
2

### AIPMT 2010 Prelims

A common emitter amplifier has a voltage gain of 50, an input impedance of 100 $$\Omega$$ and an output impedance of 200 $$\Omega$$. The power gain of the amplifier is
A
500
B
1000
C
1250
D
50

## Explanation

Voltage gain= $$\beta$$ × Impedance gain

$$\Rightarrow$$50 = β × (200/100)

$$\Rightarrow$$ $$\beta$$ = 25

Power gain = $$\beta$$ × Voltage gain

= 25 × 50 = 1250
3

### AIPMT 2010 Prelims

Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has high melting point ?
A
metallic bonding
B
van der Waal's bonding
C
ionic bonding
D
covalent bonding

## Explanation

In case of metal, conductivity decreases with increase in temperature and metal has high melting point.
4

### AIPMT 2010 Prelims

The device that can act as a complete electronic circuit is
A
junction diode
B
integrated circuit
C
junction transistor
D
zener diode

## Explanation

Integrated circuit can act as a complete electronic circuit.

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