1

### AIPMT 2011 Mains

In the following figure, the diodes which are forward biased, are A
(A), (B) and (D)
B
(C) only
C
(C) and (A)
D
(B) and (D)

## Explanation

p-n junction is said to be forward biased when p side is at high potential than n side. It is for circuit (A) and (C).
2

### AIPMT 2011 Prelims

In forward biasing of the p-n junction
A
the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
B
the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
C
the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
D
the positive terminal of the battery is connected to p-side and the depletion region becomes thin.

## Explanation

In forward biasing, the positive terminal of the battery is connected to p-side and the negative terminal to n-side of p-n junction. The forward bias voltage opposes the potential barrier. Due to it, the depletion region becomes thin.
3

### AIPMT 2011 Mains

A Zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is A
5 mA
B
10 mA
C
15 mA
D
20 mA

## Explanation

Voltage across 250 Ω resistance = 20 V – 15 V = 5 V

Now current through 250 $\Omega$ resistance: 5/250 = 20 mA

If voltage across load resistance 1 k$\Omega$ is 15 V, then

current through 1 kΩ is 15/1000 = 15 mA

The current through the zener diode is

= Current through 250 $\Omega$ resistance – Current through 1 k$\Omega$ resistance.

= 20 - 15

= 5 mA
4

### AIPMT 2011 Prelims

If a small amount of antimony is added to germanium crystal
A
it becomes a p-type semiconductor
B
the antimony becomes an acceptor atom
C
there will be more free electrons than holes in the semiconductor
D
its resistance is increased

## Explanation

If a small amount of antimony is added to germanium crystal, crystal becomes n-type semiconductor. Hence, there will be more free electrons than holes.