1
GATE ECE 2017 Set 1
MCQ (Single Correct Answer)
+1
-0.3
Consider a wireless communication link between a transmitter and a receiver located in free space, with finite and strictly positive capacity. If the effective areas of the transmitter and the receiver antennas, and the distance between them are all doubled, and everything else remains unchanged, the maximum capacity of the wireless link
A
increases by a factor of $$2$$
B
decrease by a factor $$2$$
C
remains unchanged
D
decreases by a factor of $$\sqrt 2 $$
2
GATE ECE 2017 Set 1
Numerical
+2
-0
An optical fiber is kept along the$$\widehat Z$$ direction. The refractive indices for the electric fields along $$\widehat X$$ and $$\widehat Y$$ directions in the fiber are $${n_x} = 1.5000$$ and $${n_y} = 1.5001$$, respectively ($${n_x} \ne {n_y}$$ due to the imperfection in the fiber cross-section). The free space wavelength of a light wave propagating in the fiber is $$1.5\,\,\,\mu m$$. If the light wave is circularly polarized at the input of the fiber, the minimum propagation distance after which it becomes linearly polarized, in centimeters, is _______ .
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3
GATE ECE 2017 Set 1
MCQ (Single Correct Answer)
+1
-0.3
A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?
A
Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites
B
Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites
C
Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites
D
Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites
4
GATE ECE 2017 Set 1
Numerical
+2
-0
The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1x1016 $$cm^{-3}$$ and electronic charge q = 1.6x10-19 C. If a bias of 5V is applied across a 1 $$\mu$$m region of this semiconductor, the resulting current density in this region, in kA/cm2, is _________. GATE ECE 2017 Set 1 Electronic Devices and VLSI - Semiconductor Physics Question 14 English
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