A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statement is true?

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1x10¹⁶ $$cm^{-3}$$ and electronic charge q = 1.6x10^-19 C. If a bias of 5V is applied across a 1 $$\mu$$m region of this semiconductor, the resulting current density in this region, in kA/cm², is _________.

For a narrow base PNP BJT, the excess minority carrier concentration ($$\bigtriangleup n_E$$ for emitter, $$\bigtriangleup p_B$$ for base, $$\bigtriangleup n_E$$ for collector) normalized to equilibrium minority carrier concentration ($$\bigtriangleup n_{E0}$$ for emitter, $$\bigtriangleup p_{B0}$$ for base, $$\bigtriangleup n_{C0}$$ for collector) in the quasi-neutral emitter, base and collector regions are shown below. Which one of the following biasing modes is the transistor operating in?

For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage V_tn = 1 V and its trans-conductance parameter $${\mu _n}{C_{ox}}\left( {{W \over L}} \right) = 1m{\rm A}/{V^2}.$$ Neglect channel length modulation and body bias effects. Under these conditions the drain current I_D in mA is______.