GATE ECE 2016 Set 2 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

-0.3

The Ebers-Moll model of a BJT is valid

only in active mode

only in active and saturation modes

only in active and cut-off modes

in active, saturation and cut-off modes

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

-0.3

A long-channel NMOS transistor is biased in the linear region with V_DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

If the device width W is increased, the resistance decreases.

If the threshold voltage is reduced, the resistance decreases.

If the device length L is increased, the resistance increases.

If V_GS is increased, the resistance increases.

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

-0.3

Transistor geometries in a CMOS inverter have been adjusted to meet the requirement for worst case charge and discharge times for driving a load capacitor C. This design is to be converted to that of a NOR circuit in the same technology, so that its worst case charge and discharge times while driving the same capacitor are similar. The channel lengths of all transistors are to be kept unchanged. Which one of the following statements is correct? GATE ECE 2016 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 47 English

GATE ECE 2016 Set 2 Electronic Devices and VLSI - IC Basics and MOSFET Question 47 English

Widths of PMOS transistors should be doubled, while widths of NMOS transistors should be halved.

Widths of PMOS transistors should be doubled, while widths of NMOS transistors should not be changed.

Widths of PMOS transistors should be halved, while widths of NMOS transistors should not be changed.

Widths of PMOS transistors should be unchanged, while widths of NMOS transistors should be halved.

GATE ECE 2016 Set 2

MCQ (Single Correct Answer)

-0.6

A voltage V_G is applied across a MOS capacitor with metal gate and p-type silicon substrate at T=300 K. The inversion carrier density (in number of carriers per unit area) for V_G = 0.8 V is $$2\,\, \times \,\,{10^{11}}\,\,\,\,\,\,c{m^{ - 2}}$$ . For $${V_G}\,\, = \,\,1.3\,\,V,$$ the inversion carrier density is $$4\,\,\, \times \,\,\,{10^{11}}\,\,\,\,c{m^{ - 2}}.$$ What is the value of the inversion carrier density for V_G = 1.8 V?

$$4.5 \times {10^{11}}\,\,c{m^{ - 2}}$$

$$6.0 \times {10^{11}}\,\,c{m^{ - 2}}$$

$$7.2 \times {10^{11}}\,\,c{m^{ - 2}}$$

$$8.4 \times {10^{11}}\,\,c{m^{ - 2}}$$

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