The parallel-plate capacitor shown in the figure has movable plates. The capacitor is charged so that the energy stored in it is E when the plate separation is d. The capacitor is then isolated electrically and the plates are moved such that the plate separation becomes 2d.

At this new plate separation, what is the energy stored in the capacitor, neglecting fringing effects?

Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points.

Given q = 1.6 × 10⁻¹⁹ coulomb, $$\varepsilon$$₀ = 8.85 × 10⁻¹⁴ F/cm, $$\varepsilon$$_r = 11.7 for silicon, the value of L in nm is ________.

The Ebers-Moll model of a BJT is valid

A long-channel NMOS transistor is biased in the linear region with V_DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?