1
GATE ECE 2016 Set 2
Numerical
+1
-0
Light from free space is incident at an angle $${\theta _1}$$ to the normal of the facet of a step-index large core optical fibre. The core and cladding refractive indices are $${n_1}\,\, = \,\,1.5$$ and $${n_2}\,\, = \,\,1.4$$ respectively. GATE ECE 2016 Set 2 Electromagnetics - Miscellaneous Question 5 English

The maximum value of $${\theta _1}$$ (in degrees) for which the incident light will be guided in the core of the fibre is ________ .

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2
GATE ECE 2016 Set 2
Numerical
+2
-0
Consider a region of silicon devoid of electrons and holes, with an ionized donor density of $${\mathrm N}_\mathrm d^+=10^{17}\;\mathrm{cm}^{-3}$$. The electric field at x = 0 is 0 V/cm and the electric field at x = L is 50 kV/cm in the positive x direction. Assume that the electric field is zero in the y and z directions at all points. GATE ECE 2016 Set 2 Electronic Devices and VLSI - PN Junction Question 4 English

Given q = 1.6 × 10−19 coulomb, $$\varepsilon$$0 = 8.85 × 10−14 F/cm, $$\varepsilon$$r = 11.7 for silicon, the value of L in nm is ________.

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3
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
The Ebers-Moll model of a BJT is valid
A
only in active mode
B
only in active and saturation modes
C
only in active and cut-off modes
D
in active, saturation and cut-off modes
4
GATE ECE 2016 Set 2
MCQ (Single Correct Answer)
+1
-0.3
A long-channel NMOS transistor is biased in the linear region with VDS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?
A
If the device width W is increased, the resistance decreases.
B
If the threshold voltage is reduced, the resistance decreases.
C
If the device length L is increased, the resistance increases.
D
If VGS is increased, the resistance increases.
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