GATE ECE 2014 Set 4 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2014 Set 4

Numerical

-0

For an antenna radiating in free space, the electric field at a distance of 1 km is found to be 12 m V/m. Given that intrinsic impedance of the free space is 120$$\pi \Omega $$, the magnitude of average power density due to this antenna at a ditance of 2 km from the antenna (in n W/$${m^2}$$) is

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GATE ECE 2014 Set 4

MCQ (Single Correct Answer)

-0.3

Match column A with column B.

Column
1. Point electromagnetic source
2. Dish antenna
3. Yagi-Uda antenna

Column
P. Highly directional
Q. End fire
R. Isotropic

1 = P, 2 = Q, 3 = R

1 = R, 2 = P, 3 = Q

1 = Q, 2 = P, 3 = R

1 = R, 2 = Q, 3 = P

GATE ECE 2014 Set 4

MCQ (Single Correct Answer)

-0.3

In the figure ln(ρ_i) is plotted as a function of 1/T, where ρ_i the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear. GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 25 English

GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 25 English

The slope of the line can be used to estimate

Band gap energy of silicon (E_g)

Sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)$$

Reciprocal of the sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)^{-1}$$

Intrinsic carrier concentration of silicon (n_i)

GATE ECE 2014 Set 4

Numerical

-0

The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap E_g= 1.1 eV is ________.

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