1
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+2
-0.6
If $$\overrightarrow{\mathrm E}=-\left(2\mathrm y^2\;-3\mathrm{yz}^2\right)\widehat{\mathrm x}\;-\left(6\mathrm{xy}^2-3\mathrm{xz}^2\right)\widehat{\mathrm y}+\left(6\mathrm{xyz}\right)\widehat{\mathrm z}$$

is the electric field in a source free region, a valid expression for the electrostatic potential is

A
xy3 - yz2
B
2xy3 - xyz2
C
y3 + xyz2
D
2xy3 - 3xyz2
2
GATE ECE 2014 Set 4
Numerical
+2
-0
The electric field (assumed to be one-dimensional) between two points A and B is shown. Let $$\psi_A$$ and $$\psi_B$$ be the electrostatic potentials at A and B, respectively. The value of $$\psi_A$$ − $$\psi_B$$ in Volts is ________. GATE ECE 2014 Set 4 Electromagnetics - Maxwell Equations Question 25 English
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3
GATE ECE 2014 Set 4
Numerical
+2
-0
Consider two BJT's biased at the same collector current with area A1 = 0.2 μm × 0.2 μm and A2 = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 1010 cm-3, and q = 1.6 × 10-19 C, the difference between the base-emitter voltages (in mV) of the two BJT's (i.e., VBE1 – VBE2) is___________.
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4
GATE ECE 2014 Set 4
Numerical
+1
-0
The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg= 1.1 eV is ________.
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