If $$\overrightarrow{\mathrm E}=-\left(2\mathrm y^2\;-3\mathrm{yz}^2\right)\widehat{\mathrm x}\;-\left(6\mathrm{xy}^2-3\mathrm{xz}^2\right)\widehat{\mathrm y}+\left(6\mathrm{xyz}\right)\widehat{\mathrm z}$$

is the electric field in a source free region, a valid expression for the electrostatic potential is

The electric field (assumed to be one-dimensional) between two points A and B is shown. Let $$\psi_A$$ and $$\psi_B$$ be the electrostatic potentials at A and B, respectively. The value of $$\psi_A$$ − $$\psi_B$$ in Volts is ________.

Consider two BJT's biased at the same collector current with area A₁ = 0.2 μm × 0.2 μm and A₂ = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10¹⁰ cm^-3, and q = 1.6 × 10^-19 C, the difference between the base-emitter voltages (in mV) of the two BJT's (i.e., V_BE1 – V_BE2) is___________.

In the figure ln(ρ_i) is plotted as a function of 1/T, where ρ_i the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear.

The slope of the line can be used to estimate