1
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+1
-0.3
Match column A with column B.

Column
1. Point electromagnetic source
2. Dish antenna
3. Yagi-Uda antenna

Column
P. Highly directional
Q. End fire
R. Isotropic

A
1 = P, 2 = Q, 3 = R
B
1 = R, 2 = P, 3 = Q
C
1 = Q, 2 = P, 3 = R
D
1 = R, 2 = Q, 3 = P
2
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+1
-0.3
In the figure ln(ρi) is plotted as a function of 1/T, where ρi the intrinsic resistivity of silicon, T is is the temperature, and the plot is almost linear. GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 25 English

The slope of the line can be used to estimate

A
Band gap energy of silicon (Eg)
B
Sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)$$
C
Reciprocal of the sum of electron and hole mobility in silicon $$\left(\mu_n+\mu_p\right)^{-1}$$
D
Intrinsic carrier concentration of silicon (ni)
3
GATE ECE 2014 Set 4
Numerical
+1
-0
The cut-off wavelength (in µm) of light that can be used for intrinsic excitation of a semiconductor material of bandgap Eg= 1.1 eV is ________.
Your input ____
4
GATE ECE 2014 Set 4
Numerical
+2
-0
Consider a silicon sample doped with ND = 1×1015/cm3 donor atoms. Assume that the intrinsic carrier concentration ni = 1.5×1010/cm3. If the sample is additionally doped with NA = 1×1018/cm3 acceptor atoms, the approximate number of electrons/cm3 in the sample, at T=300 K, will be _________________.
Your input ____
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12