1
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+2
-0.6
An N-type semiconductor having uniform doping is biased as shown in the figure. GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 13 English

If EC is the lowest energy level of the conduction band, EV is the highest energy level of the valance band and EF is the Fermi level, which one of the following represents the energy band diagram for the biased N-type semiconductor?

A
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 13 English Option 1
B
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 13 English Option 2
C
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 13 English Option 3
D
GATE ECE 2014 Set 4 Electronic Devices and VLSI - Semiconductor Physics Question 13 English Option 4
2
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+1
-0.3
The series $$\sum\limits_{n = 0}^\infty {{1 \over {n!}}\,} $$ converges to
A
$$2$$ $$ln$$ $$2$$
B
$${\sqrt 2 }$$
C
$$2$$
D
$$e$$
3
GATE ECE 2014 Set 4
MCQ (Single Correct Answer)
+2
-0.6
For a right angled triangle, if the sum of the lengths of the hypotenuse and a side is kept constant, in order to have maximum area of the triangle, the angle between the hypotenuse and the side is
A
$${12^ \circ }$$
B
$${36^ \circ }$$
C
$${60^ \circ }$$
D
$${45^ \circ }$$
4
GATE ECE 2014 Set 4
Numerical
+1
-0
The magnitude of the gradient for the function $$f\left( {x,y,z} \right) = {x^2} + 3{y^2} + {z^3}\,\,$$ at the point $$(1,1,1)$$ is _________.
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