The intrinsic carrier concentration of silicon sample at 300^oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is

The band gap of silicon at 300 K is

In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, V_D is found to be 700 mV. If the temperature rises to 40°C, V_D becomes approximately equal to

If the transistor in Figure is in saturation, then