GATE ECE 2002 | GATE ECE Year Wise Previous Years Questions

PREVIOUS NEXT

GATE ECE 2002

MCQ (Single Correct Answer)

-0.3

The band gap of silicon at 300 K is

1.36 eV

1.10 eV

0.80 eV

0.67 eV

GATE ECE 2002

MCQ (Single Correct Answer)

-0.3

In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, V_D is found to be 700 mV. If the temperature rises to 40°C, V_D becomes approximately equal to GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 28 English

GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 28 English

740 mV

660 mV

680 mV

700 mV

GATE ECE 2002

MCQ (Single Correct Answer)

-0.3

If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 21 English

I_C is always equal to b_dcI_B

I_C is always equal to -b_dcI_B

I_C is greater than or equal to b_dcI_B

I_C is less than b_dcI_B

GATE ECE 2002

MCQ (Single Correct Answer)

-0.6

The contents of Register (B) and Accumulator (A) of 8085 microprocessor are 49H and 3AH respectively. The contents of A and the status of carry flag (CY) and sign flag (S) after executing SUB B instructions are

A = F1, CY = 1, S =1

A = 0F, CY = 1, S =1

A = F0, CY = 0, S =0

A = 1F, CY = 1, S =1

PREVIOUS NEXT

GATE ECE Papers

2024