1
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
The band gap of silicon at 300 K is
A
1.36 eV
B
1.10 eV
C
0.80 eV
D
0.67 eV
2
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 28 English
A
740 mV
B
660 mV
C
680 mV
D
700 mV
3
GATE ECE 2002
MCQ (Single Correct Answer)
+1
-0.3
If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 21 English
A
IC is always equal to bdcIB
B
IC is always equal to -bdcIB
C
IC is greater than or equal to bdcIB
D
IC is less than bdcIB
4
GATE ECE 2002
MCQ (Single Correct Answer)
+2
-0.6
Consider the following assembly language program. GATE ECE 2002 Microprocessors - Instruction Set and Programming with 8085 Question 18 English The execution of the above program in an 8085 microprocessor will result in
A
an output of 87H at port 1
B
an output of 87H at port 2
C
infinite looping of the program execution with accumulator data remaining at 00H.
D
infinite looping of the program execution with accumulator data alternating between 00H and 87H
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