Consider a parallel plate waveguide with plate separation d as shown in Fig. The electric and magnetic fields for the TEM mode are given by $${E_x} = \,{E_0}\,\,{e^{ - j\,k\,z + j\,\omega \,t}},\,{H_y} = {{{E_0}} \over \eta }\,{e^{ - j\,k\,z + j\,\omega \,t}}$$

Where $$k = \,\,\eta \,\omega \,\, \in $$
(a) Determine the surface charge densities $${\rho _s}$$ on the plates at x = 0 and x = d
(b) Determine the surface current densities $$\mathop {{J_s}}\limits^ \to $$ on the same plates.
(c) Prove that $${\rho _s}$$ and $$\mathop {{J_s}}\limits^ \to $$ satisfy the current continuity condition.

Consider a parallel plate waveguide with plate separation d as shown in Fig. The electric and magnetic fields for the TEM mode are given by $${E_x} = \,{E_0}\,\,{e^{ - j\,k\,z + j\,\omega \,t}},\,{H_y} = {{{E_0}} \over \eta }\,{e^{ - j\,k\,z + j\,\omega \,t}}$$

Where $$k = \,\,\eta \,\omega \,\, \in $$
(a) Determine the surface charge densities $${\rho _s}$$ on the plates at x = 0 and x = d
(b) Determine the surface current densities $$\mathop {{J_s}}\limits^ \to $$ on the same plates.
(c) Prove that $${\rho _s}$$ and $$\mathop {{J_s}}\limits^ \to $$ satisfy the current continuity condition.

The intrinsic carrier concentration of silicon sample at 300^oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is

The band gap of silicon at 300 K is