GATE ECE 2002 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2002

MCQ (Single Correct Answer)

-0.3

In the figure, a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, V_D is found to be 700 mV. If the temperature rises to 40°C, V_D becomes approximately equal to GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 27 English

GATE ECE 2002 Electronic Devices and VLSI - PN Junction Question 27 English

740 mV

660 mV

680 mV

700 mV

GATE ECE 2002

MCQ (Single Correct Answer)

-0.3

The intrinsic carrier concentration of silicon sample at 300^oK is $$1.5\times10^{16}/m^3$$. If after doping, the number of majority carriers is $$5\times10^{20}/m^3$$ , minority carrier density is

$$4.50\times10^{11}/m^3$$

$$3.33\times10^4/m^3$$

$$5.00\times10^{20}/m^3$$

$$3.00\times10^{-5}/m^3$$

GATE ECE 2002

MCQ (Single Correct Answer)

-0.3

If the transistor in Figure is in saturation, then GATE ECE 2002 Electronic Devices and VLSI - BJT and FET Question 21 English

I_C is always equal to b_dcI_B

I_C is always equal to -b_dcI_B

I_C is greater than or equal to b_dcI_B

I_C is less than b_dcI_B

GATE ECE 2002

MCQ (Single Correct Answer)

-0.6

The contents of Register (B) and Accumulator (A) of 8085 microprocessor are 49H and 3AH respectively. The contents of A and the status of carry flag (CY) and sign flag (S) after executing SUB B instructions are

A = F1, CY = 1, S =1

A = 0F, CY = 1, S =1

A = F0, CY = 0, S =0

A = 1F, CY = 1, S =1

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