1
MCQ (Single Correct Answer)

AIPMT 2003

Barrier potential of a p-n junction diode does not depened on
A
diode design
B
temperature
C
forward bias
D
doping density

Explanation

Barrier potential does not depend in diode design while barrier potential depends upon temperature, doping density and forward biasing.
2
MCQ (Single Correct Answer)

AIPMT 2003

If a full wave rectifier circuit is operating from 50 Hz mains, the fundamental frequency in the ripple will be
A
25 Hz
B
50 Hz
C
70.7 Hz
D
100 Hz

Explanation

In full wave rectifier the fundamental frequency in ripple is twice of input frequency.
3
MCQ (Single Correct Answer)

AIPMT 2003

A n-p-n transistor conducts when
A
both collector and emitter are positive with respect to the base
B
collector is positive and emitter is negative with respect to the base
C
collector is positive and emitter is at same potential as the base
D
both collector and emitter are negative with respect to the base

Explanation

When the collector is positive and emitter is negative with respect to base, it causes the forward biasing for each junction, which causes conduction of current.
4
MCQ (Single Correct Answer)

AIPMT 2003

Reverse bias applied to a junction diode
A
lowers the potential barrier
B
raises the potential barrier
C
increases the majority carrier current
D
increases the minority carrier current

Explanation

In reverse bias, the size of the depletion region increases thereby increasing the potential barrier.

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