A transistor is operated in common emitter configuration at VC = 2 V such that a change in the base current from 100 $$\mu $$A to 300 $$\mu $$A produces a change in the collector current from 10 mA to 20 mA. The current gain is
A
50
B
75
C
100
D
25
2
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
Symbolic representation of four logic gates are shown as
Pick out which ones are for AND, NAND and NOT gates, respectively
A
(ii), (iii) and (iv)
B
(iii), (ii) and (i)
C
(iii), (ii) and (iv)
D
(ii), (iv) and (iii)
3
AIPMT 2011 Prelims
MCQ (Single Correct Answer)
+4
-1
In forward biasing of the p-n junction
A
the positive terminal of the battery is connected to p-side and the depletion region becomes thick.
B
the positive terminal of the battery is connected to n-side and the depletion region becomes thin.
C
the positive terminal of the battery is connected to n-side and the depletion region becomes thick.
D
the positive terminal of the battery is connected to p-side and the depletion region becomes thin.
4
AIPMT 2010 Mains
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
For transistor action
(1) Base, emitter and collector regions should have similar size and doping concentrations.
(2) The base region must be vety thin and lightly doped.
(3) The emitter-base junction is forward biased and base-collector junction is reverse biased.
(4) Both the emitter-base junction as well as the base-collector junction are forward biased.
Which one of the following pairs of statements is correct?
