1
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
2
GATE ECE 2015 Set 3
Numerical
+2
-0
In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: kn = $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; VTN = 1V. Asuume that the channel length modulation parameter $$\lambda $$ is zero and body is shorted to source. The minimum supply voltage VDD (in volts) needed to ensure that transistor M1 operates in saturation mode of operation is _____ GATE ECE 2015 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 13 English
Your input ____
3
GATE ECE 2015 Set 3
Numerical
+2
-0
The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage same, the drain current increased to 1.02 mA. Assume that drain to source saturation voltage is much smaller than the applied drain-source voltage. The channel length modulation p[arameter $$\lambda $$ (in V-1) is _______
Your input ____
4
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
For $$A = \left[ {\matrix{ 1 & {\tan x} \cr { - \tan x} & 1 \cr } } \right],$$ the determinant of $${A^T}\,{A^{ - 1}}$$ is
A
$${\sec ^2}x$$
B
$$\cos 4x$$
C
$$1$$
D
$$0$$
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