1
GATE ECE 2015 Set 3
Numerical
+1
-0
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage VEB = 600 mV, the emitter-collector voltage VEC(in Volts) is ______.
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2
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
A
Current gain will increase
B
Unity gain frequency will increase
C
Emitter base junction capacitance will increase
D
Early voltage will increase
3
GATE ECE 2015 Set 3
Numerical
+2
-0
An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with VBE = 700 mV. The thermal voltage (VT) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in μA) is _____.
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4
GATE ECE 2015 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following processes is preferred to from the gate dielectric (SiO2) of MOSFETs?
A
Sputtering
B
Molecular beam epitaxy
C
Wet oxidation
D
Dry oxidation
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