If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with V_BE = 700 mV. The thermal voltage (V_T) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in μA) is _____.

Which one of the following processes is preferred to from the gate dielectric (SiO₂) of MOSFETs?

In the circuit shown, both the enhancement mode NMOS transistors have the following characteristics: k_n = $${\mu _n}{C_{ox}}(W/L) = 1m{\rm A}/{V^2}$$ ; V_TN = 1V. Asuume that the channel length modulation parameter $$\lambda $$ is zero and body is shorted to source. The minimum supply voltage V_DD (in volts) needed to ensure that transistor M₁ operates in saturation mode of operation is _____