GATE ECE 2015 Set 3 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2015 Set 3

MCQ (Single Correct Answer)

-0.6

The electric field profile in the depletion region of a p-n junction in equilibrium is shown in the figure. Which one of the following statements is NOT TRUE? GATE ECE 2015 Set 3 Electronic Devices and VLSI - PN Junction Question 6 English

GATE ECE 2015 Set 3 Electronic Devices and VLSI - PN Junction Question 6 English

The left side of the junction is n-type and the right side is p-type

Both the n-type and p-type depletion regions are uniformly doped

The potential difference across the depletion region is 700 mV

If the p-type region has a doping concentration of 10¹⁵ cm^–3 , then the doping concentration in the n-type region will be 10¹⁶ cm^–3

GATE ECE 2015 Set 3

Numerical

-0

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage V_EB = 600 mV, the emitter-collector voltage V_EC(in Volts) is ______.

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GATE ECE 2015 Set 3

MCQ (Single Correct Answer)

-0.3

If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

Current gain will increase

Unity gain frequency will increase

Emitter base junction capacitance will increase

Early voltage will increase

GATE ECE 2015 Set 3

Numerical

-0

An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with V_BE = 700 mV. The thermal voltage (V_T) is 25 mV and the current gain (β) may vary from 50 to 150 due to manufacturing variations. The maximum emitter current (in μA) is _____.

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