In the circuit shown below, the transistors $M_1$ and $M_2$ are biased in saturation. Their small signal transconductances are $g_{m1}$ and $g_{m2}$ respectively. Neglect body effect, channel length modulation and intrinsic device capacitances.

Assuming that capacitor $C_i$ is a short circuit for AC analysis, the exact magnitude of small signal voltage gain $\left| \frac{v_{out}}{v_{in}} \right|$ is ______.

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V.

Given that $\mu_{n}C_{ox} \frac{W}{L}$ = 50 $\mu$A/$V^2$, the transconductance at the new operating point (in $\mu$A/V, rounded off to two decimal places) is ______.

A digital communication system transmits through a noiseless bandlimited channel $[-W, W]$. The received signal $z(t)$ at the output of the receiving filter is given by $z(t) = \sum\limits_{n} b[n]x(t-nT)$ where $b[n]$ are the symbols and $x(t)$ is the overall system response to a single symbol. The received signal is sampled at $t = mT$. The Fourier transform of $x(t)$ is $X(f)$. The Nyquist condition that $X(f)$ must satisfy for zero intersymbol interference at the receiver is ______.