1
GATE ECE 2024
MCQ (Single Correct Answer)
+2
-1.33

The opamps in the circuit shown are ideal, but have saturation voltages of ±10 V.

GATE ECE 2024 Analog Circuits - Operational Amplifier Question 2 English

Assume that the initial inductor current is 0 A. The input voltage (Vi) is a triangular signal with peak voltages of ±2 V and time period of 8 μs. Which one of the following statements is true?

A

V01 is delayed by 2 μs relative to Vi, and V02 is a triangular waveform.

B

V01 is not delayed relative to Vi, and V02 is a trapezoidal waveform.

C

V01 is not delayed relative to Vi, and V02 is a triangular waveform.

D

V01 is delayed by 1 μs relative to Vi, and V02 is a trapezoidal waveform.

2
GATE ECE 2024
MCQ (Single Correct Answer)
+2
-1.33

In the circuit below, the opamp is ideal.

GATE ECE 2024 Analog Circuits - Operational Amplifier Question 1 English

If the circuit is to show sustained oscillations, the respective values of $R_1$ and the corresponding frequency of oscillation are ____.

A

$29R$ and $1/(2\pi \sqrt{6}RC)$

B

$2R$ and $1/(2\pi RC)$

C

$29R$ and $1/(2\pi RC)$

D

$2R$ and $1/(2\pi \sqrt{6}RC)$

3
GATE ECE 2024
MCQ (Single Correct Answer)
+2
-1.33

In the circuit shown below, the transistors $M_1$ and $M_2$ are biased in saturation. Their small signal transconductances are $g_{m1}$ and $g_{m2}$ respectively. Neglect body effect, channel length modulation and intrinsic device capacitances.

GATE ECE 2024 Analog Circuits - FET and MOSFET Question 2 English

Assuming that capacitor $C_i$ is a short circuit for AC analysis, the exact magnitude of small signal voltage gain $\left| \frac{v_{out}}{v_{in}} \right|$ is ______.

A

$g_{m2}R_D$

B

$\frac{g_{m2} R_D \left( R_B + \frac{1}{g_{m1}} \right)}{R_B + \frac{1}{g_{m1}} + R_S}$

C

$\frac{g_{m2} R_D \left( R_B + \frac{1}{g_{m1}} + R_S \right)}{R_B + \frac{1}{g_{m1}}}$

D

$\frac{g_{m2} R_D \left( \frac{1}{g_{m1}} \right)}{\frac{1}{g_{m1}} + R_S}$

4
GATE ECE 2024
MCQ (More than One Correct Answer)
+2
-1.33

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

A

Under high-level injection condition in forward active mode, $\beta$ will decrease with increase in the magnitude of collector current.

B

Under low-level injection condition in forward active mode, where the current at the emitter-base junction is dominated by recombination-generation process, $\beta$ will decrease with increase in the magnitude of collector current.

C

$\beta$ will be lower when the BJT is in saturation region compared to when it is in active region.

D

A higher value of $\beta$ will lead to a lower value of the collector-to-emitter breakdown voltage.

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