1
GATE ECE 2024
MCQ (Single Correct Answer)
+2
-1.33

In the circuit below, the opamp is ideal.

GATE ECE 2024 Analog Circuits - Operational Amplifier Question 2 English

If the circuit is to show sustained oscillations, the respective values of $R_1$ and the corresponding frequency of oscillation are ____.

A

$29R$ and $1/(2\pi \sqrt{6}RC)$

B

$2R$ and $1/(2\pi RC)$

C

$29R$ and $1/(2\pi RC)$

D

$2R$ and $1/(2\pi \sqrt{6}RC)$

2
GATE ECE 2024
MCQ (Single Correct Answer)
+2
-1.33

In the circuit shown below, the transistors $M_1$ and $M_2$ are biased in saturation. Their small signal transconductances are $g_{m1}$ and $g_{m2}$ respectively. Neglect body effect, channel length modulation and intrinsic device capacitances.

GATE ECE 2024 Analog Circuits - FET and MOSFET Question 4 English

Assuming that capacitor $C_i$ is a short circuit for AC analysis, the exact magnitude of small signal voltage gain $\left| \frac{v_{out}}{v_{in}} \right|$ is ______.

A

$g_{m2}R_D$

B

$\frac{g_{m2} R_D \left( R_B + \frac{1}{g_{m1}} \right)}{R_B + \frac{1}{g_{m1}} + R_S}$

C

$\frac{g_{m2} R_D \left( R_B + \frac{1}{g_{m1}} + R_S \right)}{R_B + \frac{1}{g_{m1}}}$

D

$\frac{g_{m2} R_D \left( \frac{1}{g_{m1}} \right)}{\frac{1}{g_{m1}} + R_S}$

3
GATE ECE 2024
MCQ (More than One Correct Answer)
+2
-0

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

A

Under high-level injection condition in forward active mode, $\beta$ will decrease with increase in the magnitude of collector current.

B

Under low-level injection condition in forward active mode, where the current at the emitter-base junction is dominated by recombination-generation process, $\beta$ will decrease with increase in the magnitude of collector current.

C

$\beta$ will be lower when the BJT is in saturation region compared to when it is in active region.

D

A higher value of $\beta$ will lead to a lower value of the collector-to-emitter breakdown voltage.

4
GATE ECE 2024
Numerical
+2
-0

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V.

Given that $\mu_{n}C_{ox} \frac{W}{L}$ = 50 $\mu$A/$V^2$, the transconductance at the new operating point (in $\mu$A/V, rounded off to two decimal places) is ______.

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