A lossless transmission line with characteristic impedance $Z_0 = 50 \Omega$ is terminated with an unknown load. The magnitude of the reflection coefficient is $|\Gamma| = 0.6$. As one moves towards the generator from the load, the maximum value of the input impedance magnitude looking towards the load (in $\Omega$) is _________.
For non-degenerately doped n-type silicon, which one of the following plots represents the temperature ($T$) dependence of free electron concentration ($n$)?
The free electron concentration profile $n(x)$ in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different positions. Which of the following statements is/are true?

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