1
GATE ECE 2014 Set 3
Numerical
+2
-0
The slope of the ID vs. VGS curve of an n-channel MOSFET in linear region is 10-3$${\Omega ^{ - 1}}$$ at VDS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}} $$ vs. V GS curve (in $$\sqrt A /V$$ ) under saturation region is approximately ______.
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2
GATE ECE 2014 Set 3
Numerical
+2
-0
For the MOSFET M1 shown in the figure, assume W/L =2, VDD = 2.0 V, $$\mu n$$ COX = 100$$\mu {\rm A}/{V^2}$$ and VTH =0.5 V. The transistor M1 switches from saturation region to linear regionm when Vin(in Volts) is _____ GATE ECE 2014 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 16 English
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3
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
Which one of the following statements is NOT true for a square matrix $$A$$?
A
If $$A$$ is upper triangular, the eigenvalues of $$A$$ are the diagonal elements of it
B
If $$A$$ is real symmetric, the eigenvalues of $$A$$ are always real and positive
C
If $$A$$ is real , the eigenvalues of $$A$$ and $${A^T}$$ are always the same
D
If all the principal minors of $$A$$ are positive , all the eigenvalues of $$A$$ are also positive
4
GATE ECE 2014 Set 3
Numerical
+1
-0
The maximum value of the function $$\,f\left( x \right) = \ln \left( {1 + x} \right) - x$$ (where $$x > - 1$$ ) occurs at $$x=$$________.
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