1
GATE ECE 2014 Set 3
Numerical
+2
-0
Given the vector $$$\mathrm A=\left(\cos\;\mathrm x\right)\left(\sin\;\mathrm y\right)\;{\widehat{\mathrm a}}_\mathrm x\;+\;\left(\sin\;\mathrm x\right)\left(\cos\;\mathrm y\right){\widehat{\mathrm a}}_\mathrm y$$$ where $${\widehat{\mathrm a}}_\mathrm x$$ , $${\widehat{\mathrm a}}_\mathrm y$$ denote unit vectors along x, y directions, respectively. The magnitude of curl of A is ________
Your input ____
2
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to
A
The minority carrier mobility
B
The minority carrier recombination lifetime
C
The majority carrier concentration
D
The excess minority carrier concentration
3
GATE ECE 2014 Set 3
Numerical
+1
-0
At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant Dp in cm2/s is__________.
Your input ____
4
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
In MOSFET fabrication, the channel length is defined during the process of
A
Isolation oxide growth
B
Channel stop implantation
C
Poly-silicon gate patterning
D
Lithography step leading to the contact pads
EXAM MAP