1
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, the silicon BJT has $$\beta \,\,\,\,50.\,\,\,\,\,$$ Assume $${V_{BE}}\,\,\, = \,\,\,0.7$$ and $${V_{CE\left( {sat} \right)}}\, = \,0.2V.$$ Which one of the following statements is correct ? GATE ECE 2014 Set 3 Analog Circuits - Bipolar Junction Transistor Question 17 English
A
For $${R_c}\,\, = \,\,1k\Omega ,$$ the BJT operates in the saturation region.
B
For For $${R_c}\,\, = \,\,3k\Omega ,$$ the BJT operates in the saturation region
C
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the cut-off region.
D
For For $${R_c}\,\, = \,\,20k\Omega ,$$ the BJT operates in the linear region.
2
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+1
-0.3
The desirable characteristics of a transconductance amplifier are
A
high input resistance and high output resistance
B
high input resistance and low output resistance
C
low input resistance and high output resistance
D
low input resistance and low output resistance
3
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
Assuming that the Op-amp in the circuit shown is ideal, V0 is given by GATE ECE 2014 Set 3 Analog Circuits - Operational Amplifier Question 29 English
A
$${5 \over 2}{V_1} - 3{V_2}$$
B
$$2{V_1} - {5 \over 2}{V_2}$$
C
$$ - {3 \over 2}{V_1} + {7 \over 2}{V_2}$$
D
$$ - 3{V_1} + {{11} \over 2}{V_2}$$
4
GATE ECE 2014 Set 3
MCQ (Single Correct Answer)
+2
-0.6
Let $$X(t)$$ be a wide sense stationary $$(WSS)$$ random procfess with power spectral density $${S_x}\left( f \right)$$. If $$Y(t)$$ is the process defined as $$Y(t) = X(2t - 1)$$, the power spectral density $${S_y}\left( f \right)$$ is .
A
$${S_y}\left( f \right) = {1 \over 2}{S_x}\left( {{f \over 2}} \right){e^{ - j\pi f}}$$
B
$${S_y}\left( f \right) = {1 \over 2}{S_x}\left( {{f \over 2}} \right){e^{ - j\pi f/2}}$$
C
$${S_y}\left( f \right) = {1 \over 2}{S_x}\left( {{f \over 2}} \right)$$
D
$${S_y}\left( f \right) = {1 \over 2}{S_x}\left( {{f \over 2}} \right){e^{ - j2\pi f}}$$
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