The input resistance of a silicon transistor is 100 $$\Omega $$. Base current is changed by 40 $$\mu $$A which results in a change in collector current by 2 mA. This transistor is used as a common emitter amplifier with a load resistance of 4 k$$\Omega $$. The voltage gain of the amplifier is
A
2000
B
3000
C
4000
D
1000
2
AIPMT 2012 Mains
MCQ (Single Correct Answer)
+4
-1
To get an output Y= 1 in given circuit which of the following input will be correct ?
A
A $$ \to $$ 1, B $$ \to $$ 0, C $$ \to $$ 0
B
A $$ \to $$ 1, B $$ \to $$ 0, C $$ \to $$ 1
C
A $$ \to $$ 1, B $$ \to $$ 1, C $$ \to $$ 0
D
A $$ \to $$ 0, B $$ \to $$ 1, C $$ \to $$ 0
3
AIPMT 2012 Prelims
MCQ (Single Correct Answer)
+4
-1
C and Si both have same lattice structure; having 4 bonding electrons in each. However, C is insulator where as Si is intrinsic semiconductor. This is because
A
In case of C the valence band is not completely filled at absolute zero temperature.
B
In case of C the conduction band is partly filled even at absolute zero temperature.
C
The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third.
D
The four bonding electrons in the case of C lie in the third orbit , whereas for Si they lie in the fourth orbit.
4
AIPMT 2012 Prelims
MCQ (Single Correct Answer)
+4
-1
Out of Syllabus
Transfer characteristics [output voltage (V0) vs input voltage (Vi)] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used
