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### GATE EE 2014 Set 2

Numerical
The $$SCR$$ in the circuit shown has a latching current of $$40$$ $$mA.$$ A gate pulse of $$50$$ $$\mu s$$ is applied to the $$SCR$$. The maximum value of $$R$$ in $$\Omega$$ to ensure successful firing of the $$SCR$$ is ____________. 2

### GATE EE 2013

Thyristor $$T$$ in the figure below is initially off and is triggered with a single pulse of width $$10\mu s.$$ It is given that $$L = \left( {{{100} \over \pi }} \right)\mu H$$ and $$C = \left( {{{100} \over \pi }} \right)\mu F.$$ Assuming latching and holding currents of the thyristor are both zero and the initial charge on $$C$$ is zero, $$T$$ conducts for A
$$10\mu s$$
B
$$50$$ $$s$$
C
$$100\mu s$$
D
$$200\mu s$$
3

### GATE EE 2009

Match the switch arrangements on the top row to be steady $$-$$ state $$V$$ - $$I$$ characteristics on the lower row. The steady state operating points are shown by large black dots.  A
$$A - i,\,\,B - ii,\,\,C - iii,\,\,D - iv$$
B
$$A - ii,\,\,B - iv,\,\,C - i,\,\,D - iii$$
C
$$A - iv,\,\,B - iii,\,\,C - i,\,\,D - ii$$
D
$$A - iv,\,\,B - iii,\,\,C - ii,\,\,D - i$$
4

### GATE EE 2007

A $$1:1$$ pulse transformer $$(PT)$$ is used to trigger the $$SCR$$ in the adjacent figure. The $$SCR$$ is rated at $$1.5$$ $$kV$$, $$250$$ $$A$$ with $${{\rm I}_L} = 250\,mA,\,\,{{\rm I}_H} = 150\,mA,$$ and $${{\rm I}_{G\max }} = 150mA$$ with $${{\rm I}_L} = 250\,mA,$$ $${{\rm I}_{G\min }} = 100mA.$$ The $$SCR$$ is connected to an inductive load, where $$L$$ $$=150$$ $$mH$$ in series with a small resistance and the supply voltage is $$200$$ $$V$$ $$dc.$$ The forward drops of all transistors/diodes and gate $$-$$ cathode junction during $$ON$$ state are $$1.0V$$

The minimum approximate volt $$-$$second rating of the pulse transformer suitable for triggering the $$SCR$$ should be: (Volt - second rating is the maximum of product of the voltage and the width of the pulse that may be applied)

A
$$2000\,\mu \,\,V - s$$
B
$$200\,\mu \,\,V - s$$
C
$$20\,\mu \,\,V - s$$
D
$$2\,\mu \,\,V - s$$
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#### Questions Asked from Power Semiconductor Devices

On those following papers in Marks 2
Number in Brackets after Paper Indicates No. of Questions
GATE EE 2014 Set 2 (1)
GATE EE 2013 (1)
GATE EE 2009 (1)
GATE EE 2007 (2)
GATE EE 2006 (1)
GATE EE 2005 (2)
GATE EE 2004 (1)

### Joint Entrance Examination

JEE Main JEE Advanced WB JEE

### Graduate Aptitude Test in Engineering

GATE CSE GATE ECE GATE EE GATE ME GATE CE GATE PI GATE IN

NEET

Class 12