1
GATE EE 2022
MCQ (Single Correct Answer)
+2
-0.67
As shown in the figure below, to concentric conducting spherical shells, centred at r = 0 and having radii r = c and r = d are maintained at potentials such that the potential V(r) at r = c is V1 and V(r) at r = d is V2. Assume that V(r) depends only on r, where r is the radial distance. The expression for V(r) in the region between r = c and r = d is
2
GATE EE 2018
Numerical
+2
-0.67
The capacitance of an air-filled parallel-plate capacitor is 60 pF. When a dielectric slab
whose thickness is half the distance between the plates, is placed on one of the plates
covering it entirely, the capacitance becomes 86 pF. Neglecting the fringing effects, the
relative permittivity of the dielectric is _____________ (up to 2 decimal places).
Your input ____
3
GATE EE 2017 Set 2
Numerical
+2
-0
A thin soap bubble of radius R = 1 cm, and thickness a = 3.3 µm(a << R), is at a potential of 1
V with respect to a reference point at infinity. The bubble bursts and becomes a single spherical
drop of soap (assuming all the soap is contained in the drop) of radius r. The volume of the soap
in the thin bubble is $$4\mathrm{πR}^2\mathrm a$$ and that of the drop is $$\frac43\mathrm{πr}^3$$. The potential in volts, of the resulting
single spherical drop with respect to the same reference point at infinity is __________. (Give
the answer up to two decimal places.)
Your input ____
4
GATE EE 2016 Set 1
MCQ (Single Correct Answer)
+2
-0.6
Two electric charges q and -2q are placed at (0,0) and (6,0) on the x-y plane. The equation of the
zero equipotential curve in the x-y plane is
Questions Asked from Electrostatics (Marks 2)
Number in Brackets after Paper Indicates No. of Questions
GATE EE 2024 (1)
GATE EE 2023 (2)
GATE EE 2022 (1)
GATE EE 2018 (1)
GATE EE 2017 Set 2 (1)
GATE EE 2016 Set 1 (1)
GATE EE 2015 Set 1 (1)
GATE EE 2015 Set 2 (1)
GATE EE 2014 Set 3 (1)
GATE EE 2013 (1)
GATE EE 2011 (1)
GATE EE 2009 (1)
GATE EE 2008 (2)
GATE EE 2007 (1)
GATE EE 2003 (3)
GATE EE 2001 (2)
GATE EE 1997 (2)
GATE EE Subjects
Electric Circuits
Electromagnetic Fields
Signals and Systems
Electrical Machines
Engineering Mathematics
General Aptitude
Power System Analysis
Electrical and Electronics Measurement
Analog Electronics
Control Systems
Power Electronics