1
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C}$$ of the transistor is approximately GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 35 English
A
$$\left[ {3.3/3.3} \right]\,mA$$
B
$$\left[ {3.3/\left( {3.3 + 0.33} \right)} \right]\,mA$$
C
$$\left[ {3.3/33} \right]\,mA$$
D
$$\left[ {3.3/\left( {33 + 33} \right)} \right]\,mA$$
2
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 20 English
A
$$(40V, 4A)$$
B
$$(0V, 4A)$$
C
$$(40V, 5A)$$
D
$$(15V, 4A)$$
3
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
For the circuit shown in figure with an ideal operational amplifier, the maximum phase shift of the output $${V_o}$$ with reference to the input $${V_{in}}$$ is GATE EE 2003 Analog Electronics - Operational Amplifier Question 66 English
A
$${0^0}$$
B
$$ - {90^0}$$
C
$$ + {90^0}$$
D
$$ \pm {180^0}$$
4
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 21 English
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA