1
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
A voltage signal $$\,10\,\,\sin \,\omega t\,\,$$ is applied to the circuit with ideal diodes, as shown in figure. The maximum and minimum values of the output waveform of the circuit are respectively GATE EE 2003 Analog Electronics - Diode Circuits and Applications Question 15 English
A
$$+10V$$ and $$-10V$$
B
$$+4V$$ and $$-4V$$
C
$$+7V$$ and $$-4V$$
D
$$+4V$$ and $$-7V$$
2
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C}$$ of the transistor is approximately GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 32 English
A
$$\left[ {3.3/3.3} \right]\,mA$$
B
$$\left[ {3.3/\left( {3.3 + 0.33} \right)} \right]\,mA$$
C
$$\left[ {3.3/33} \right]\,mA$$
D
$$\left[ {3.3/\left( {33 + 33} \right)} \right]\,mA$$
3
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 31 English
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device
4
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 18 English
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
EXAM MAP
Medical
NEET
Graduate Aptitude Test in Engineering
GATE CSEGATE ECEGATE EEGATE MEGATE CEGATE PIGATE IN
CBSE
Class 12