1
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
A composite parallel plate capacitor is made up of two different dielectric materials with different thickness ($${t_1}$$ and $${t_2}$$) as shown in Fig. The two different dielectric materials are separated by a conducting foil $$F.$$ The voltage of the conducting foil is GATE EE 2003 Electromagnetic Fields - Electrostatics Question 12 English
A
$$52$$ $$V$$
B
$$60$$ $$V$$
C
$$67$$ $$V$$
D
$$33$$ $$V$$
2
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Two conductors are carrying forward and return current of $$ + {\rm I}$$ and $$ - {\rm I}$$ as shown in Fig.

The magnetic field intensity $$\overrightarrow H $$ at point $$P$$ is

A
$${{\rm I} \over {\pi d}}{\overrightarrow a _y}$$
B
$${{\rm I} \over {\pi d}}{\overrightarrow a _x}$$
C
$${{\rm I} \over {2\pi d}}{\overrightarrow a _y}$$
D
$${{\rm I} \over {2\pi d}}{\overrightarrow a _x}$$
3
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a thyristor with the standard terminations of anode $$(A),$$ cathode $$(K),$$ gate $$(G)$$ and the different junctions named $$J1, J2,$$ and $$J3$$. When the thyristor is turned on and conducting GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 23 English
A
$$J1$$ and $$J2$$ are forward biased and $$J3$$ is reverse biased
B
$$J1$$ and $$J3$$ are forward biased and $$J2$$ is reverse biased
C
$$J1$$ is forward biased and $$J2$$ and $$J3$$ are reverse biased
D
$$J1, J2,$$ and $$J3$$ are all forward biased
4
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
Figure shows a $$MOSFET$$ with an integral body diode. It is employed as a power switching device in the ON and OFF states through appropriate control. The ON and OFF states of the switch are given on the $${V_{DS}} - {{\rm I}_s}$$ plane by GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 22 English
A
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 22 English Option 1
B
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 22 English Option 2
C
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 22 English Option 3
D
GATE EE 2003 Power Electronics - Power Semiconductor Devices Question 22 English Option 4
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