1
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
Assuming the operational amplifier to be ideal, the gain $${V_{out}}/{V_{in}}$$ for the circuit shown in figure GATE EE 2003 Analog Electronics - Operational Amplifier Question 40 English
A
$$-1$$
B
$$-20$$
C
$$-100$$
D
$$-120$$
2
GATE EE 2003
MCQ (Single Correct Answer)
+2
-0.6
The circuit of fig shows a $$555$$ Timer $$IC$$ connected as an Astable multivibrator. The value of the capacitor $$C$$ is $$10$$ $$nF.$$ The values of the resistors $${R_A}$$ and $${R_B}$$ for a frequency of $$10$$ $$kHz$$ and a duty cycle of $$0.75$$ for the output voltage waveform are GATE EE 2003 Analog Electronics - 555 Timer Question 3 English
A
$${R_A} = 3.62\,k\Omega ,\,\,{R_B} = 3.62\,k\Omega $$
B
$${R_A} = 3.62\,k\Omega ,\,\,{R_B} = 7.25\,k\Omega $$
C
$${R_A} = 7.25\,k\Omega ,\,\,{R_B} = 3.62\,k\Omega $$
D
$${R_A} = 7.25\,k\Omega ,\,\,{R_B} = 7.25\,k\Omega $$
3
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 34 English
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device
4
GATE EE 2003
MCQ (Single Correct Answer)
+1
-0.3
In the circuit of figure shown, assume that the transistor has $${h_{fe}} = 99$$ and $${V_{BE}} = 0.7V.$$
The value of collector current $${{\rm I}_C}$$ of the transistor is approximately GATE EE 2003 Analog Electronics - Bjt and Mosfet Biasing Question 35 English
A
$$\left[ {3.3/3.3} \right]\,mA$$
B
$$\left[ {3.3/\left( {3.3 + 0.33} \right)} \right]\,mA$$
C
$$\left[ {3.3/33} \right]\,mA$$
D
$$\left[ {3.3/\left( {33 + 33} \right)} \right]\,mA$$