1
GATE EE 2003
+1
-0.3
The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is
A
an n-channel depletion mode device
B
an n-channel enhancement mode device
C
a p-channel depletion mode device
D
a p-channel enhancement mode device
2
GATE EE 2003
+2
-0.6
For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become
A
$$2.8$$ mA
B
$$2.0$$ mA
C
$$1.4$$ mA
D
$$1.0$$ mA
3
GATE EE 2003
+2
-0.6
In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is
A
$$(40V, 4A)$$
B
$$(0V, 4A)$$
C
$$(40V, 5A)$$
D
$$(15V, 4A)$$
4
GATE EE 2003
+1
-0.3
For the circuit shown in figure with an ideal operational amplifier, the maximum phase shift of the output $${V_o}$$ with reference to the input $${V_{in}}$$ is
A
$${0^0}$$
B
$$- {90^0}$$
C
$$+ {90^0}$$
D
$$\pm {180^0}$$
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