The variation of drain current with gate-to-source voltage $$\left( {{{\rm I}_D} - {V_{GS}}} \right.$$ characteristic$$\left. \, \right)$$ of a MOSFET is shown in Figure. The MOSFET is

In the circuit shown, the current gain $$'\beta '$$ of the ideal transistor is $$10.$$ The operating point of the transistor $$\left( {{V_{CE}},{{\rm I}_C}} \right)$$ is

For the $$n$$-channel enhancement $$MOSFET$$ shown in figure,, the threshold voltage $${V_{th}}\,\, = \,\,2V.$$ The drain current $${I_D}$$ of the $$MOSFET$$ is $$4$$ $$mA$$ when the drain resistance $${R_D}$$ is $$1k\Omega .$$ If the value of $${R_D}$$ is increased to $$4\Omega ,$$ drain current $${I_D}$$ will become

For the circuit shown in figure with an ideal operational amplifier, the maximum phase shift of the output $${V_o}$$ with reference to the input $${V_{in}}$$ is