In an electrostatic field, the electric displacement density vector, $$\overrightarrow D $$, is given by

$$\overrightarrow D (x,y,z) = ({x^3}\overrightarrow i + {y^3}\overrightarrow j + x{y^2}\overrightarrow k )$$ C/m²,

where, $$\overrightarrow i $$, $$\overrightarrow j $$, $$\overrightarrow k $$ are the unit vectors along x-axis, y-axis, and z-axis, respectively. Consider a cubical region R centered at the origin with each side of length 1 m, and vertices at ($$\pm$$ 0.5 m, $$\pm$$ 0.5 m, $$\pm$$ 0.5 m). The electric charge enclosed within R is __________ C (rounded off to two decimal places).

Consider a long rectangular bar of direct bandgap p-type semiconductor. The equilibrium hole density is 10¹⁷ cm^$$-$$3 and the intrinsic carrier concentration is 10¹⁰ cm^$$-$$3. Electron and hole diffusion lengthss are 2 $$\mu$$m and 1 $$\mu$$m, respectively. The left side of the bar (x = 0) is uniformly illuminated with a laser having photon energy greater than the bandgap of the semiconductor. Excess electron-hole pairs are generated ONLY at x = 0 because of the laser. The steady state electron density at x = 0 is 10¹⁴ cm^$$-$$3 due to laser illumination. Under these conditions and ignoring electric field, the closest approximation (among the given options) of the steady state electron density at x = 2 $$\mu$$m, is _____________.

In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm^$$-$$3, the value of E_C $$-$$ E_Fn = 200 meV, where E_C and E_Fn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm^$$-$$3. For n = 0.5 $$\times$$ 10¹⁶ cm^$$-$$3, the closest approximation of the value of (E_C $$-$$ E_Fn), among the given options is _________.

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with V_G = 2V. The corresponding inversion charge density (Q_IN) is 2.2 $$\mu$$C/cm². Assume oxide capacitance per unit area as C_ox = 1.7 $$\mu$$F/cm². For V_G = 4V, the value of Q_IN is __________ $$\mu$$C/cm² (rounded off to one decimal place).