Consider the CMOS circuit shown in the figure (substrates are connected to their respective sources). The gate width (W) to gate length (L) ratios $$\left( {{W \over L}} \right)$$ of the transistors are as shown. Both the transistors have the same gate oxide capacitance per unit area. For the pMOSFET, the threshold voltage is $$-$$1 V and the mobility of holes is $$40{{c{m^2}} \over {V.s}}$$. For the nMOSFET, the threshold voltage is 1 V and the mobility of electrons is $$300{{c{m^2}} \over {V.s}}$$. The steady state output voltage V₀ is ___________.

The ideal long channel nMOSFET and pMOSFET devices shown in the circuits have threshold voltages of 1 V and $$-$$1 V, respectively. The MOSFET substrates are connected to their respectively sources. Ignore leakage currents and assume that the capacitors are initially discharged. For the applied voltages as shown, the steady state voltages are ____________.

An ideal OPAMP circuit with a sinusoidal input is shown in the figure. The 3 dB frequency is the frequency at which the magnitude of the voltage gain decreases by 3 dB from the maximum value. Which of the options is/are correct?

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$_n) and oxide capacitance per unit area (C_ox) is $$\mu$$_nC_ox = 1 mA/V². The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 $$-$$ sin(2t)] V and drain-to source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ___________.