A p-type semiconductor with zero electric field is under illumination (low level injection) in steady state condition. Excess minority carrier density is zero at x = $$\pm$$ 2l_n, where l_n = 10^$$-$$4 cm is the diffusion length of electrons. Assume electronic charge, q = $$-$$1.6 $$\times$$ 10^$$-$$19 C. The profiles of photo-generation rate of carriers and the recombination rate of excess minority carriers (R) are shown. Under these conditions, the magnitude of the current density due to the photo-generated electrons at x = +2_ln is ___________ mA/cm² (rounded off to two decimal places).

Consider the two-dimensional vector field $$\overrightarrow F (x,y) - x\overrightarrow i + y\overrightarrow j $$, where $$\overrightarrow i $$ and $$\widehat j$$ denote the unit vectors along the x-axis and the y-axis, respectively. A contour C in the x-y plane, as shown in the figure, is composed of two horizontal lines connected at the two ends by two semicircular arcs of unit radius. The contour is traversed in the counter-clockwise sense. The value of the closed path integral

$$\oint\limits_C {\overrightarrow F (x,y)\,.\,(dx\overrightarrow i + dy\overrightarrow j )} $$

is ___________.

Consider a system of linear equations Ax = b, where

$$A = \left[ {\matrix{ 1 \hfill & { - \sqrt 2 } \hfill & 3 \hfill \cr { - 1} \hfill & {\sqrt 2 } \hfill & { - 3} \hfill \cr } } \right]$$, $$b = \left[ {\matrix{ 1 \cr 3 \cr } } \right]$$

This system is equations admits __________.

Consider the following partial differential equation (PDE)

$$a{{{\partial ^2}f(x,y)} \over {\partial {x^2}}} + b{{{\partial ^2}f(x,y)} \over {\partial {y^2}}} = f(x,y)$$,

where a and b are distinct positive real numbers. Select the combination(s) of values of the real parameters $$\xi $$ and $$\eta $$ such that $$f(x,y) = {e^{\xi x + \eta y}}$$ is a solution of the given PDE.