Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$_n) and oxide capacitance per unit area (C_ox) is $$\mu$$_nC_ox = 1 mA/V². The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 $$-$$ sin(2t)] V and drain-to source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ___________.

For the following circuit with an ideal OPAMP, the difference between the maximum and the minimum values of the capacitor voltage (V_c) is __________.

A circuit with an ideal OPAMP is shown. The Bode plot for the magnitude (in dB) of the gain transfer function (A_v(j$$\omega$$) = V_out(j$$\omega$$)/V_in(j$$\omega$$)) of the circuit is also provided (here, $$\omega$$ is the angular frequency in rad/s). The values of R and C are __________.

A circuit and the characteristics of the diode (D) in it are shown. The ratio of the minimum to the maximum small signal voltage gain $${{\partial {V_{out}}} \over {\partial {V_{in}}}}$$ is __________ (rounded off to two decimal places).