1
GATE ECE 2016 Set 3
Numerical
+2
-0
A radar operating at 5 GHz uses a common antenna for transmission and reception. The antenna has a gain of 150 and is aligned for maximum directional radiation and reception to a target 1 km away having radar cross-section of 3m2. If it transmits 100 kW, then the received power (in $$\mu W$$) is ______ .
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2
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+2
-0.6
Consider the charge profile shown in the figure. The resultant potential distribution is best
described by
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 4 English](https://gateclass.cdn.examgoal.net/examside/questions/9171eb6ea1b36f35f12435eedf80663291aa4b90621fdb4ade219fc0f56d90a7.jpg)
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 4 English](https://gateclass.cdn.examgoal.net/examside/questions/9171eb6ea1b36f35f12435eedf80663291aa4b90621fdb4ade219fc0f56d90a7.jpg)
3
GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of
power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________.
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/7a81d7b285e38539a6237d53c5108c40d248bacca522101d8b6231ca18914847.jpg)
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English](https://gateclass.cdn.examgoal.net/examside/questions/7a81d7b285e38539a6237d53c5108c40d248bacca522101d8b6231ca18914847.jpg)
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4
GATE ECE 2016 Set 3
Numerical
+2
-0
The injected excess electron concentration profile in the base region of an npn BJT, biased in the
active region, is linear, as shown in the figure. If the area of the emitter-base junction is 0.001 cm2, µn = 800 cm2/(V-s) in the base region and depletion layer widths are negligible, then the collector
current Ic (in mA) at room temperature is __________.
(Given: thermal voltage VT = 26 mV at room temperature, electronic charge q = $$1.6\times10^{-19}\;C$$ )
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 9 English](https://gateclass.cdn.examgoal.net/examside/questions/710209fb6d871efc5793a2b71b8757addbf4db34bd1fccd5ce18a813c31431bd.jpg)
![GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 9 English](https://gateclass.cdn.examgoal.net/examside/questions/710209fb6d871efc5793a2b71b8757addbf4db34bd1fccd5ce18a813c31431bd.jpg)
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Paper analysis
Total Questions
Analog Circuits
4
Communications
6
Control Systems
5
Digital Circuits
3
Electromagnetics
5
Electronic Devices and VLSI
7
Engineering Mathematics
9
Microprocessors
1
Network Theory
5
Signals and Systems
6
General Aptitude
2
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