GATE ECE 2016 Set 3 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2016 Set 3

MCQ (Single Correct Answer)

-0.3

Faraday's law of electromagnetic induction is mathematically described by which one of the following equations?

$$\nabla \bullet \,\mathop B\limits^ \to = \,0$$

$$\nabla \bullet \,\mathop D\limits^ \to = \,{\rho _v}$$

$$\nabla \, \times \,\mathop E\limits^ \to = \, - {{\partial \,\mathop B\limits^ \to \,} \over {\partial t}}$$

$$\nabla \, \times \,\mathop H\limits^ \to = \,\sigma \mathop E\limits^ \to + {{\partial \,\mathop D\limits^ \to \,} \over {\partial t}}$$

GATE ECE 2016 Set 3

MCQ (Single Correct Answer)

-0.6

Consider an air-filled rectangular waveguide with dimensions a = 2.286 cm and b = 1.016 cm. The increasing order of the cut-off frequencies for different modes is

$$T{E_{01}}\,\, < \,T{E_{10}}\, < \,T{E_{11}}\,\, < \,T{E_{20}}$$

$$T{E_{20}}\,\, < \,T{E_{11}}\, < \,T{E_{10}}\,\, < \,T{E_{01}}$$

$$T{E_{10}}\,\, < \,T{E_{20}}\, < \,T{E_{01}}\,\, < \,T{E_{11}}$$

$$T{E_{10}}\,\, < \,T{E_{11}}\, < \,T{E_{20}}\,\, < \,T{E_{01}}$$

GATE ECE 2016 Set 3

Numerical

-0

A radar operating at 5 GHz uses a common antenna for transmission and reception. The antenna has a gain of 150 and is aligned for maximum directional radiation and reception to a target 1 km away having radar cross-section of 3m². If it transmits 100 kW, then the received power (in $$\mu W$$) is ______ .

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GATE ECE 2016 Set 3

Numerical

-0

The injected excess electron concentration profile in the base region of an npn BJT, biased in the active region, is linear, as shown in the figure. If the area of the emitter-base junction is 0.001 cm², µ_n = 800 cm²/(V-s) in the base region and depletion layer widths are negligible, then the collector current I_c (in mA) at room temperature is __________. (Given: thermal voltage V_T = 26 mV at room temperature, electronic charge q = $$1.6\times10^{-19}\;C$$ ) GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 9 English

GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 9 English

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