1
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+2
-0.6
Consider the charge profile shown in the figure. The resultant potential distribution is best described by GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English
A
GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English Option 1
B
GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English Option 2
C
GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English Option 3
D
GATE ECE 2016 Set 3 Electronic Devices and VLSI - PN Junction Question 5 English Option 4
2
GATE ECE 2016 Set 3
Numerical
+1
-0
The figure shows the I-V characteristics of a solar cell illuminated uniformly with solar light of power 100 mW/cm2. The solar cell has an area of 3 cm2 and a fill factor of 0.7. The maximum efficiency (in %) of the device is __________. GATE ECE 2016 Set 3 Electronic Devices and VLSI - BJT and FET Question 15 English
Your input ____
3
GATE ECE 2016 Set 3
MCQ (Single Correct Answer)
+1
-0.3
The figure shows the band diagram of a Metal Oxide Semiconductor (MOS). The surface region of this MOS is in GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 46 English
A
inversion
B
accumulation
C
depletion
D
flat band
4
GATE ECE 2016 Set 3
Numerical
+2
-0
Figures $${\rm I}$$ and $${\rm I}{\rm I}$$ show two MOS capacitor of unit area. The capacitor in Figure I has insulator materials X (of thickness t1 = 1 nm and dielectric constant $${\varepsilon _1}$$ = 4) and Y (of thickness t2 =3 nm and dielectric constant $${\varepsilon _2}$$ = 200). The capacitor in Figure $${\rm I}{\rm I}$$ has only insulator material X of thickness teq. If the capacitors are of equal capacitance, then the value of teq (in nm) is ______ GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 10 English 1 GATE ECE 2016 Set 3 Electronic Devices and VLSI - IC Basics and MOSFET Question 10 English 2
Your input ____
EXAM MAP