In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

In a MOSFET operating in the saturation region, the channel length modulation effect causes

The small-signal resistance (i.e., $${{d{V_B}} \over {d{I_D}}}$$ ) in $$k\Omega $$ offered by the n-channel MOSFET M shown in the figure below, at bias point of V_B = 2V is (device data for M: device transconductance parameter

k_N = $${\mu _n}{C_{ox}^{'}}$$ (W/L)= 40$$\mu {\rm A}/{V^2},$$ threshold voltage V_TN=1V, and neglect body effect and channel length modulation effects)

The minimum eigenvalue of the following matrix is $$\left[ {\matrix{ 3 & 5 & 2 \cr 5 & {12} & 7 \cr 2 & 7 & 5 \cr } } \right]$$