1
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across RL, the minimum value of RL in Ω and the minimum power rating of the Zener diode in mW, respectively, are GATE ECE 2013 Electronic Devices and VLSI - PN Junction Question 10 English
A
125 and 125
B
125 and 250
C
250 and 125
D
250 and 250
2
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces
A
superior quality oxide with a higher growth rate
B
inferior quality oxide with a higher growth rate
C
inferior quality oxide with a lower growth rate
D
superior quality oxide with a lower growth rate
3
GATE ECE 2013
MCQ (Single Correct Answer)
+1
-0.3
In a MOSFET operating in the saturation region, the channel length modulation effect causes
A
an increase in the gate-source capacitance
B
a decrease in the Transconductance
C
a decrease in the unity-gain cutoff frequency
D
a decrease in the output resistance
4
GATE ECE 2013
MCQ (Single Correct Answer)
+2
-0.6
The small-signal resistance (i.e., $${{d{V_B}} \over {d{I_D}}}$$ ) in $$k\Omega $$ offered by the n-channel MOSFET M shown in the figure below, at bias point of VB = 2V is (device data for M: device transconductance parameter

kN = $${\mu _n}{C_{ox}^{'}}$$ (W/L)= 40$$\mu {\rm A}/{V^2},$$ threshold voltage VTN=1V, and neglect body effect and channel length modulation effects)

GATE ECE 2013 Electronic Devices and VLSI - IC Basics and MOSFET Question 25 English
A
12.5
B
25
C
50
D
100
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