In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

In a MOSFET operating in the saturation region, the channel length modulation effect causes

The small-signal resistance (i.e., $${{d{V_B}} \over {d{I_D}}}$$ ) in $$k\Omega $$ offered by the n-channel MOSFET M shown in the figure below, at bias point of V_B = 2V is (device data for M: device transconductance parameter

k_N = $${\mu _n}{C_{ox}^{'}}$$ (W/L)= 40$$\mu {\rm A}/{V^2},$$ threshold voltage V_TN=1V, and neglect body effect and channel length modulation effects)