GATE ECE 2013 | GATE ECE Year Wise Previous Years Questions

GATE ECE 2013

MCQ (Single Correct Answer)

-0.3

In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is

injection, and subsequent diffusion and recombination of minority carriers

injection, and subsequent drift and generation of minority carriers

extraction, and subsequent diffusion and generation of minority carriers

extraction, and subsequent drift and recombination of minority carriers

GATE ECE 2013

MCQ (Single Correct Answer)

-0.6

In the circuit shown below, the knee current of the ideal Zener diode is 10 mA. To maintain 5V across R_L, the minimum value of R_L in Ω and the minimum power rating of the Zener diode in mW, respectively, are GATE ECE 2013 Electronic Devices and VLSI - PN Junction Question 9 English

GATE ECE 2013 Electronic Devices and VLSI - PN Junction Question 9 English

125 and 125

125 and 250

250 and 125

250 and 250

GATE ECE 2013

MCQ (Single Correct Answer)

-0.3

In IC technology, dry oxidation (using dry oxygen) as compared to wet oxidation (using steam or water vapor) produces

superior quality oxide with a higher growth rate

inferior quality oxide with a higher growth rate

inferior quality oxide with a lower growth rate

superior quality oxide with a lower growth rate

GATE ECE 2013

MCQ (Single Correct Answer)

-0.3

In a MOSFET operating in the saturation region, the channel length modulation effect causes

an increase in the gate-source capacitance

a decrease in the Transconductance

a decrease in the unity-gain cutoff frequency

a decrease in the output resistance

PREVIOUS NEXT

GATE ECE Papers

2024