1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
Copper behaves as a
A
conductor always.
B
conductor or dielectric depending on the applied electric field strength.
C
conductor or dielectric depending on the frequency.
D
conductor or dielectric depending on the electric current density.
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The drift velocity of electrons in silicon
A
is proportional to the electric field for all values of electric field
B
is independent of the electric field
C
increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance.
D
increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field.
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A BJT is said to be operating in the saturation region if
A
both the junctions are reverse biased
B
base-emitter junction is reverse biased and base-collector junction is forward biased.
C
base-emitter junction is forward biased and base-collector junction reverse biased
D
both the junctions are forward biased
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The diffusion potential across a P-N junction
A
decreases with increasing doping concentration
B
increases with decreasing band gap
C
does not depend on doping concentration
D
increases with increase in doping concentrations