GATE ECE 1995 | GATE ECE Year Wise Previous Years Questions

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GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The Early-Effect in a bipolar junction transistor is caused by

Fast-turn-on.

Fast-turn-off.

Large collector-base reverse bias

Large emitter-base forward bias

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The Ebers-Moll model is applicable to

bipolar junction transistors

NMOS transistors

unipolar junction transistors

junction field-effect transistors

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

A BJT is said to be operating in the saturation region if

both the junctions are reverse biased

base-emitter junction is reverse biased and base-collector junction is forward biased.

base-emitter junction is forward biased and base-collector junction reverse biased

both the junctions are forward biased

GATE ECE 1995

MCQ (Single Correct Answer)

-0.3

The breakdown voltage of a transistor with its base open is BV_CEO with emitter open is BV_CBO, then

BV_CEO = BV_CBO

BV_CEO > BV_CBO

BV_CEO < BV_CBO

BV_CEO is not related to BV_CBO

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