1
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The Early-Effect in a bipolar junction transistor is caused by
A
Fast-turn-on.
B
Fast-turn-off.
C
Large collector-base reverse bias
D
Large emitter-base forward bias
2
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
A BJT is said to be operating in the saturation region if
A
both the junctions are reverse biased
B
base-emitter junction is reverse biased and base-collector junction is forward biased.
C
base-emitter junction is forward biased and base-collector junction reverse biased
D
both the junctions are forward biased
3
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
The breakdown voltage of a transistor with its base open is BVCEO with emitter open is BVCBO, then
A
BVCEO = BVCBO
B
BVCEO > BVCBO
C
BVCEO < BVCBO
D
BVCEO is not related to BVCBO
4
GATE ECE 1995
MCQ (Single Correct Answer)
+1
-0.3
If $$L\left\{ {f\left( t \right)} \right\} = {{2\left( {s + 1} \right)} \over {{s^2} + 2s + 5}}$$ then $$f\left( {{0^ + }} \right)$$ and $$f\left( \propto \right)$$ are given by ___________.
A
$$0,2$$ respectively
B
$$2,0$$ respectively
C
$$0,1$$ respectively
D
$${2 \over 5},0$$ respectively
EXAM MAP