C_J $$\propto$$ V_R

C_J $$\propto$$ V_R^-1

C_J $$\propto$$ V_R^-1/2

C_J $$\propto$$ V_R^-1/3

tunneling of charge carriers across the junction

thermo ionic emission

diffusion of charge carriers across the junction

hopping of charge carriers across the junction

decreases with increasing doping concentration

increases with decreasing band gap

does not depend on doping concentration

increases with increase in doping concentrations

is proportional to the electric field for all values of electric field

is independent of the electric field

increases at low values of electric field and decreases at high values of electric field exhibiting negative differential resistance.

increases linearly with electric field at low values of electric field and gradually saturates at higher values of electric field.